Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing

Journal of Applied Physics

Volumn 93, Issue 10 1, 2003, Pages 5953-5958

  Zhan, H H ^a   Notzel R ^a   Hamhuis, G J ^a   Eijkemans, T J ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; HIGH ENERGY ELECTRON DIFFRACTION; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; STRUCTURE (COMPOSITION); X RAY DIFFRACTION ANALYSIS;

SELF-ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038651099     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1566457     Document Type: Article

References (15)

1. R. Nötzel, Semicond. Sci. Technol. 11, 1365 (1996).
2. D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993).
3. Y. Sugiyama, Y. Nakata, S. Muto, Y. Awano, and N. Yokoyama. Physica E (Amsterdam) 7, 503 (2000).
4. Y. Nakata, K. Mukai, M. Sugawara, K. Ohtsubo, H. Ishikawa, and N. Yokoyama, J. Cryst. Growth 208, 93 (2000).
5. T. Mano, K. Watanabe, S. Tsukamoto, N. Koguchi, H. Fujioka, M. Oshima, C. Lee, J. Leem, H. J. Lee, and S. K. Noh, Appl. Phys. Lett. 76, 3543 (2000).
6. D. J. Eaglesham, J. Appl. Phys. 77, 3597 (1995).
7. G. Apostolopoulos, N. Boukos, A. Travlos, J. Herfort, and K. H. Ploog, Appl. Phys. Lett. 79, 3422 (2001).
8. D. D. Nolte, M. R. Melloch, S. J. Ralph, and J. M. Woodall, Appl. Phys. Lett. 61, 3098 (1992).
9. R. Takahashi. Y. Kawamura, and H. Iwamura, Appl. Phys. Lett. 68, 153 (1996).
10. M. Haiml, U. Siegner, F. Morier-Genoud, U. Keller, M. Luysberg, P. Specht, and E. R. Weber, Appl. Phys. Lett. 74, 1269 (1999).
11. H. Tsuda, A. Hirano, R. Takahashi, K. Sato, and K. Hagimoto, Electron. Lett. 32, 365 (1996).
12. T. Okuno, Y. Masumoto, M. Ito, and H. Okamoto, Appl. Phys. Lett. 77, 58 (2000).
13. X. D. Wang, Z. C. Niu, H. Wang, and S. L. Feng, J, Cryst. Growth 218, 206 (2000).
14. A. Krost, F. Heinrichsdorff, D. Bimberg, A. Darhuber, and G. Bauer, Appl. Phys. Lett. 68, 785 (1996).
15. M. A. Capano, M. Y. Yen, K. G. Eyink, and T. W. Haas, Appl. Phys. Lett. 58, 1854 (1991).