Size distribution of quantum-scale GaAs islands grown by Ga droplet induced chemical beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1507-1509

  Ro, Jeong Rae ^a   Kim, Sung Bock ^a   Park, Kyoungwan ^a   Lee, Jihwa ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; CRACK PROPAGATION; DROP FORMATION; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BEAM EQUIVALENT PRESSURES (BEP); QUANTUM NANOISLANDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034186903     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591414     Document Type: Article

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