SCOPUS 정보 검색 플랫폼

Electronics Letters

Volumn 38, Issue 16, 2002, Pages 883-884

High-reliability MOCVD-grown quantum dot laser

(7) Sellin, R L a Ribbat, C a Bimberg, D a Rinner, F b Konstanzer, H b Kelemen, M T b Mikulla, M b

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE MEASUREMENT;

QUANTUM DOT LASERS;

CONTINUOUS WAVE LASERS;

EID: 0036685459 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20020602 Document Type: Article

Times cited : (47)

References (11)

1
- 0003978311
- John Wiley & Sons, Chichester
- (1998) Quantum dot heterostructures
- Bimberg, D.¹ Grundmann, M.² Ledentsov, N.N.³

2
- 0010033099
- Quantum dots: Lasers and amplifiers
- Proc. 28th ISCS Tokyo 2001 (in print)
- (2002) IOP Conf. Proc.
- Bimberg, D.¹

3
- 21544475375
- Multidimensional quantum well laser and temperature dependence of its threshold current
- (1982) Appl. Phys. Lett. , vol.40 , pp. 939
- Arakawa, Y.¹ Sakaki, H.²

4
- 0035263919
- Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
- (2001) Sel. Top. Quantum Electron. , vol.7 , pp. 135
- Eliseev, P.G.¹ Li, H.² Liu, G.T.³ Stintz, A.⁴ Newell, T.C.⁵ Lester, L.F.⁶ Malloy, K.J.⁷

5
- 0000847215
- Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1207
- Sellin, R.L.¹ Ribbat, C.² Grundmann, M.³ Ledentsov, N.N.⁴ Bimberg, D.⁵

6
- 0033735007
- GaAs-based 1.3 μm InGaAs quantum dot lasers: A status report
- (2000) J. Electron. Mater. , vol.29 , pp. 476
- Maximov, M.V.¹ Ledentsov, N.N.² Ustinov, V.M.³ Alferov, Z.I.⁴ Bimberg, D.⁵

7
- 0042637913
- Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
- (1999) Appl. Phys. Lett. , vol.75 , pp. 3267
- Park, G.¹ Shchekin, O.B.² Csutak, S.³ Huffaker, D.L.⁴ Deppe, D.G.⁵

8
- 0000489482
- High-power quantum-dot lasers at 1100 nm
- (2000) Appl. Phys. Lett. , vol.76 , pp. 556
- Heinrichsdorff, F.¹ Ribbat, C.² Grundmann, M.³ Bimberg, D.⁴

9
- 20544462283
- High-power (> 10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1182
- Al-Muhanna, A.¹ Mawst, L.J.² Botez, D.³ Garbuzov, D.Z.⁴ Martinelli, R.U.⁵ Connolly, J.C.⁶

10
- 0032181850
- 10.9 W continuous wave optical power from 100 μm aperture InGaAs/AlGaAs (915 nm) laser diodes
- (1998) Electron. Lett. , vol.34 , pp. 2126
- He, X.¹ Srinivasan, S.² Wilson, S.³ Mitchell, C.⁴ Patel, R.⁵

11
- 0034296979
- Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes
- (2000) Electron. Lett. , vol.36 , pp. 1848
- Livshits, D.A.¹ Kochnev, I.V.² Lantratov, V.M.³ Ledentsov, N.N.⁴ Nalyot, T.A.⁵ Tarasov, I.S.⁶ Alferov, Z.I.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.