Applications of cubic MgZnO thin films in metal-insulator-silicon structures

Chinese Physics Letters

Volumn 21, Issue 6, 2004, Pages 1135-1138

  Liang, Jun ^a   Wu, Hui Zhen ^a,b   Lao, Yan Feng ^a   Qiu, Dong Jiang ^b   Chen, Nai Bo ^b   Xu, Tian Ning ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; ENERGY GAP; EPITAXIAL GROWTH; FILM GROWTH; MAGNESIUM ALLOYS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; TOPOGRAPHY; WIDE BAND GAP SEMICONDUCTORS; ZINC ALLOYS;

INTERFACIAL QUALITIES; LOW-GROWTH-TEMPERATURE; METAL INSULATOR SILICONS; METAL-INSULATOR-SILICON STRUCTURES; MGZNO THIN FILM; SCANNING ELECTRONIC MICROSCOPES; SI SUBSTRATES; SILICON DEVICES; THIN FILM ALLOYS; THIN-FILMS;

THIN FILMS;

EID: 9544252166     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/6/044     Document Type: Article

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