Annealing effect on electrical properties of high-k MgZnO film on silicon

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages

  Liang, Jun ^a   Wu, Huizhen ^a   Chen, Naibo ^b   Xu, Tianning ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; EVAPORATION; HIGH TEMPERATURE EFFECTS; SURFACES;

ANNEALING TEMPERATURE; DEPTH PROFILES; INTERFACIAL LAYERS; REACTIVE E-BEAMS;

METALLIC COMPOUNDS;

EID: 24144475498     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/L01     Document Type: Article

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