New methods for determining the void content of silicon single crystals

IEEE Transactions on Instrumentation and Measurement

Volumn 48, Issue 2, 1999, Pages 230-232

  Spaepen, Frans ^a   Eliat, Astrid ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 27844605695     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/19.769570     Document Type: Article

References (16)

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