GaN nanowires-influence of the starting material on nanowire growth

Thin Solid Films

Volumn 516, Issue 2-4, 2007, Pages 238-242

  Djurisic A B ^a   Tam, K H ^a   Hsu, Y F ^a   Zhang, S L ^a   Xie, M H ^a   Chan, W K ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

GaN; Mn doped; Nanowires

Indexed keywords

CATALYST ACTIVITY; CHEMICAL VAPOR DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

NANOWIRE GROWTH; SUBSTRATE TEMPERATURE;

NANOWIRES;

EID: 36049048583     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.031     Document Type: Article

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