Research on the Mn-implanted GaN with ferromagnetism at room temperature

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 163-167

  Xu, J ^a   Li, J ^a   Zhang, R ^a   Xiu, X Q ^a   Lu, D Q ^a   Yu, H Q ^a   Gu, S L ^a   Shen, B ^a   Shi, Y ^a   Ye, Y D ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

DMS; GaN; Implantation; Spintronics

Indexed keywords

BAND STRUCTURE; DOPING (ADDITIVES); FERROMAGNETISM; MAGNETOMETERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE;

BAND EMISSION;

GALLIUM NITRIDE;

EID: 0038010615     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00079-X     Document Type: Conference Paper

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