Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 523-526

  Fukata, N ^a   Matsushita, S ^b   Tsurui, T ^c   Chen, J ^a   Sekiguchi, T ^a   Uchida, N ^b   Murakami, K ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Electron spin resonance; Laser ablation; Nanostructures; Phosphorus; Silicon nanowires

Indexed keywords

CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; LASER ABLATION; PARAMAGNETIC RESONANCE; SILICON COMPOUNDS;

CONDUCTION ELECTRONS; ESR SIGNAL; PHOSPHORUS DOPING;

NANOWIRES;

EID: 36049025892     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.013     Document Type: Article

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