First-principles studies of di-arsenic interstitial and its implications for arsenic-interstitial diffusion in crystalline silicon

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 144-147

  Kim, Yonghyun ^a   Kirichenko, Taras A ^b   Kong, Ning ^a   Larson, Larry ^c   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c SEMATECH   (United States)

Author keywords

Arsenic; Interstitial; Silicon; Transient enhanced diffusion

Indexed keywords

ARSENIC COMPOUNDS; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL THEORY; DIFFUSION BARRIERS;

GRADIENT APPROXIMATION; STRUCTURAL CONFIGURATIONS; TRANSIENT ENHANCED DIFFUSION;

SILICON COMPOUNDS;

EID: 36049018672     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.132     Document Type: Article

References (26)

1. International Technology Roadmap for Semiconductors: 2005 Ed.
2. Ural A., Griffin P., and Plummer J. J. Appl. Phys. 85 (1999) 6440
3. Kim R., Hirose T., Shano T., Tsuji H., and Taniguchi K. Jpn. J. Appl. Phys.- Part I 41 (2002) 227
4. Solmi S., Ferri M., Bersani M., Giubertoni D., and Soncini V. J. Appl. Phys. 94 (2003) 4950
5. Mathiot D., and Pfister J.C. Appl. Phys. Lett. 42 (1983) 1043
6. Ramanoorthy M., and Pantelides S. Phys. Rev. Lett. 76 (1996) 4753
7. Xie J., and Chen S. Phys. Rev. Lett. 83 (1999) 1795
8. Muller D.C., Alonso E., and Fichtner W. Phys. Rev. B 68 (2003) 045208
9. Pandey K.C., Erbil A., Cargill III G.S., Boehme R.F., and Vanderbilt D. Phys. Rev. Lett. 61 (1988) 1282
10. Rousseau P.M., Griffin P.B., and Plummer J.D. Appl. Phys. Lett. 65 (1994) 578
11. Fahey P.M., Griffin P.B., and Plummer J.D. Rev. Mod. Phys. 61 (1989) 289
12. Giles M.D. J. Electrochem. Soc. 138 (1991) 1160
13. Harrison S.A., Edgar T.F., and Hwang G.S. Appl. Phys. Lett. 87 (2005) 231905
14. Harrison S.A., Edgar T.F., and Hwang G.S. Appl. Phys. Lett. 85 (2004) 4935
15. Kong N., Banerjee S.K., Kirichenko T., Anderson S., and Foisy M. Appl. Phys. Lett. 90 (2007) 62107
16. Harrison S.A., Edgar T.F., and Hwang G.S. Electrochem. Solid State Lett. 9 (2006) G354
17. Harrison S.A., Edgar T.F., and Hwang G.S. Phys. Rev. B 72 (2005) 195414
18. Brindos R., Keys P., Jones K., and Law M. Appl. Phys. Lett. 75 (1999) 229
19. Hohenberg P., and Kohn W. Phys. Rev. 136 (1964) B864
20. Kohn W., and Sham L.J. Phys. Rev. 140 (1965) A1133
21. Kresse G., and Furthmuller J. VASP the Guide (2001), Vienna University of Technology
22. Kresse G., and Hafner J. Phys. Rev. B RC 558 (1993) 47
23. Perdew J., and Wang Y. Phys. Rev. B 45 (1992) 13244
24. Monkhorst H., and Pack J. Phys. Rev. B 13 (1976) 5188
25. Henkelman G., Uberuaga B., and Jónsson H. J. Chem. Phys. 113 (2000) 9901
26. Richie D., Kim J., Barr S., Hazzard K., Hennig R., and Wilkins J. Phys. Rev. Lett. 92 (2004) 45501