Deformation mechanisms of silicon during nanoscratching

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 15, 2005, Pages 2858-2869

  Gassilloud, R ^a   Ballif, C ^b   Gasser, P ^a   Buerki, G ^a   Michler, J ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATRIX; NANOSCRATCHING; SILICON {001} SURFACES; DECOMPRESSION MODELING; DECOMPRESSION RATE; DEFECT DISTRIBUTION; DEFORMATION MECHANISM; DEFORMATION REGIMES; DISLOCATION NUCLEATION; HIGH-RESOLUTION SCANNING ELECTRON MICROSCOPIES; MICRO RAMAN SPECTROSCOPY;

DEFORMATION; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; STRUCTURAL LOADS; TRANSMISSION ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; MATERIALS PROPERTIES; SILICON; SPEED; STRESSES; VELOCITY;

AMORPHOUS SILICON;

EID: 29744452211     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521259     Document Type: Article

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