Preferred growth of nanocrystalline silicon in boron-doped nc-Si:H Films

Vacuum

Volumn 74, Issue 1, 2004, Pages 69-75

  Wensheng, Wei ^a   Tianmin, Wang ^a   Chunxi, Zhang ^a   Guohua, Li ^b   Hexiang, Han ^b   Kun, Ding ^b  

^a BEIHANG UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Boron doped; Electric field; Hydrogenated nanocrystalline silicon film; Nanocrystalline silicon; Preferred growth

Indexed keywords

BORON; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; FILM GROWTH; HYDROGENATION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; TRANSMISSION ELECTRON MICROSCOPY; VOLUME FRACTION; X RAY DIFFRACTION ANALYSIS;

BORON-DOPED; HYDROGENATED NANOCRYSTALLINE SILICON FILMS; NANOCRYSTALLINE SILICON; PREFERRED GROWTH;

NANOSTRUCTURED MATERIALS;

EID: 1842842921     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2003.11.008     Document Type: Article

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