Surface science aspects of etching reactions

Surface Science Reports

Volumn 14, Issue 4-6, 1992, Pages 162-269

  Winters, Harold F ^a   Coburn, J W ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL OPERATIONS--ETCHING; CHEMICAL REACTIONS--HALOGENATION; GLOW DISCHARGES--EFFECTS; ION BEAMS--EFFECTS; PLASMAS--PRODUCTION;

CHEMICAL SPUTTERING; HALOGEN GAS ETCHANTS; ION-ENHANCED ETCHING; PLASMA-ASSISTED ETCHING; REACTIVE GAS GLOW DISCHARGES; SEMICONDUCTOR SURFACE ETCHING;

SEMICONDUCTING SILICON;

EID: 0026743719     PISSN: 01675729     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-5729(92)90009-Z     Document Type: Review

References (249)

1. Etching Characteristics of Silicon and its Compounds by Gas Plasma
2. RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon Gases
3. Etching
4. Transient fluorocarbon film thickness effects near the silicon dioxide/silicon interface in selective silicon dioxide reactive ion etching
5. Kinetic ellipsometry study of the hydrogen plasma etching of hydrogenated amorphous silicon films
6. An investigation of the roughening of silicon(100) surfaces in Cl2 reactive ion etching plasmas by in situ ellipsometry and quadrupole mass spectrometry
7. Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanisms
8. Surface analysis of realistic semiconductor microstructures
9. Si and SiO2Etching Characteristics by Fluorocarbon Ion Beam
10. Plasma Processing for VLSI
11. Laser-induced gas-surface interactions
12. Etching reactions for silicon with F atoms: Product distributions and ion enhancement mechanisms
13. The etching of Cu(100) with Cl2
14. Electron-Probe Study of Fluorine-Contaminated Titanium
15. An XPS and Auger investigation of CF+3 ion bombardment of silicon
16. Molecular-beam study of gas-surface chemistry in the ion-assisted etching of silicon with atomic and molecular hydrogen and chlorine
17. An ultrahigh vacuum compatible fluorine atom source for gas–surface reaction studies
18. Plasma Synthesis and Etching of Electronic Materials
19. Plasma–surface interactions in fluorocarbon etching of silicon dioxide
20. Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion Beam
21. Chemically assisted ion beam etching of GaAs, Ti, and Mo
22. SIMS study of ion assisted etching of Si by Cl2
23. Sputtering of chlorinated silicon surfaces studied by secondary ion mass spectrometry and ion scattering spectroscopy
24. Ion-assisted etching of silicon by molecular chlorine
25. Effects of Ar+ angle of incidence on the etching of Si with Cl2 and low-energy Ar+ ions
26. Chemical processes involved in the etching of silicon by xenon difluoride
27. Modulated molecular-beam studies of the surface chemistry of silicon reaction with reactive gases
28. Plasma-assisted etching mechanisms: The implications of reaction probability and halogen coverage
29. Chemiluminescence from F and XeF2 etching reactions with silicon
30. The activated, dissociative chemisorption of methane on tungsten
31. Energy Broadening in the Auger-Type Neutralization of Slow Ions at Solid Surfaces
32. II. The energy spectrum of ejected atoms during the high energy sputtering of gold
33. On the reflection coefficient of keV heavy-ion beams from solid targets
34. Energy deposition and penetration depth of heavy ions in the electronic stopping region
35. Low energy ion scattering: Elastic and inelastic effects
36. Sputtering of SiO2 in a XeF2 and in a Cl2 atmosphere
37. Chemical sputtering by ions, electrons and photons
38. Anisotropic etching of SiO2 in low-frequency CF4/O2 and NF3/Ar plasmas
39. The etching of W(111) with XeF2
40. Reaction of silicon with chlorine and ultraviolet laser induced chemical etching mechanisms
41. The interaction of Cl(2P3/2) and Cl(2P1/2) with n-Si(100): Spontaneous etching
42. Surface modification in plasma-assisted etching of silicon
43. Investigation of kinetic mechanism for the ion-assisted etching of Si in Cl2
44. Cl35/Cl37Isotope Effects in the Fragmentations of Metastable Perchlorinated Alkane- and Silane-Ions
45. Summary Abstract: Ion-enhanced gas–surface kinetics of the Si–Cl2–Ar+ system
46. The significance of reactive ions and reactive neutrals in ion-beam-assisted etching
47. Surface processes in ion-induced etching
48. Si Etch Rate and Etch Yield with Ar+/Cl2System
49. Investigation of plasma etching mechanisms using beams of reactive gas ions
50. Time-of-flight and surface residence time measurements for ion-enhanced Si–Cl2 reaction products
51. The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport
52. Chemical etching of Si(111)-(7×7) and Al/Si(111) by atomic hydrogen
53. Reaction probability for the spontaneous etching of silicon by CF3 free radicals
54. Quantification of surface film formation effects in fluorocarbon plasma etching of polysilicon
55. Kinetics of surface reactions of CF3 radicals
56. Reaction of CF3 radicals on fused silica between 320 and 530 K
57. Summary Abstract: Simultaneous exposure of SiO2 and ThF4 to XeF2 and energetic electrons
58. Studies on the mechanism of chemical sputtering of silicon by simultaneous exposure to Cl2 and low-energy Ar+ ions
59. The thermal and ion-assisted reactions of GaAs(100) with molecular chlorine
60. Evidence for precursor-mediated Cl2 etching of GaAs{110}: Effect of surface temperature and incident translational energy on the reaction probability
61. Rare gas ion-enhanced etching of InP by Cl2
62. Maskless Etching of AN Using Focused Ion Beam
63. Effect of inert ion bombardment on chemisorption and etching of aluminum films in Cl2, Br2, CCl4, and CBr4
64. Halide formation and etching of Cu thin films with Cl2 and Br2
65. Ion enhanced reactive etching of tungsten single crystals and films with XeF2
66. Investigations of the altered surface formed during the ion-assisted etching of titanium
67. Chemically enhanced ion etching on refractory metal silicides
68. Polyimide etching in Ar, O2, and O2/F2 gas mixtures: Effect of ion energy
69. Chemically assisted sputter etching of permalloy using CO or CL2
70. Dry etching for submicron structures
71. Radical beam/ion beam etching of GaAs
72. Maskless Ion Beam Assisted Etching of Si Using Chlorine Gas
73. Ion beam assisted etching and deposition
74. Parameter and Reactor Dependence of Selective Oxide RIE in CF[sub 4] + H[sub 2]
75. X-ray photoemission spectroscopy characterization of silicon surfaces after CF4/H2 magnetron ion etching: Comparisons to reactive ion etching