Ultralarge area MOS tunnel devices for electron emission

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 15, 2007, Pages

  Thomsen, Lasse B ^a   Nielsen, Gunver ^a   Vendelbo, Søren B ^a   Johansson, Martin ^a   Hansen, Ole ^a   Chorkendorff, Ib ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35648989079     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.155315     Document Type: Article

References (38)

1. N. S. Xu and S. E. Huq, Mater. Sci. Eng., R. MIGIEA 0927-796X 10.1016/j.mser.2004.12.001 48, 47 (2005).
2. B. R. F. Kendall, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.581912 17, 2041 (1999).
3. J. Cohen, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1728880 33, 1999 (1962).
4. J. Cohen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1777370 1, 61 (1962).
5. T. Sumiya, H. Fujinuma, T. Miura, and S. Tanaka, Appl. Surf. Sci. ASUSEE 0169-4332 130-132, 36 (1998).
6. D. J. DiMaria, M. V. Fischetti, J. Batey, L. Dori, E. Tierney, and J. Stasiak, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.57.3213 57, 3213 (1986).
7. S. D. Brorson, D. J. DiMaria, M. V. Fischetti, F. L. Pesavento, P. M. Solomon, and D. W. Wong, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.336098 58, 1302 (1985).
8. H. Mimura, Y. Neo, H. Shimawaki, T. Matsumoto, and K. Yokoo, Appl. Surf. Sci. ASUSEE 0169-4332 144, 498 (2005).
9. E. Y. Wu and J. Sune, Microelectron. Reliab. MCRLAS 0026-2714 10.1016/j.microrel.2005.04.004 45, 1809 (2005).
10. M. Poppeller, E. Cartier, and R. M. Tromp, Microelectron. Eng. MIENEF 0167-9317 10.1016/S0167-9317(99)00058-1 46, 183 (1999).
11. J. W. Gadzuk, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.76. 4234 76, 4234 (1996).
12. J. W. Gadzuk, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.580573 15 1520 (1997).
13. J. W. Gadzuk, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.44.13466 44, 13466 (1991).
14. J. W. Gadzuk and C. W. Clark, J. Chem. Phys. JCPSA6 0021-9606 10.1063/1.456938 91, 3174 (1989).
15. D. Diesing, G. Kritzler, M. Stermann, D. Nolting, and A. Otto, J. Solid State Electrochem. JSSEFS 1432-8488 10.1007/s10008-002-0319-y 7, 389 (2003).
16. T. Wadayama, A. Kojim, and A. Hatta, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 79, 1891 (2004).
17. D. Diesing, H. Janssen, and A. Otto, Surf. Sci. SUSCAS 0039-6028 331-333, 289 (1995).
18. R. G. Sharpe, S. J. Dixon-Warren, P. J. Durston, and R. Palmer, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/0009-2614(95)00053-7 234, 354 (1995).
19. T. Wadayama and M. Yokawa, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/j.cplett.2006.07.012 428, 348 (2006).
20. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
21. M. Hirose, M. Koh, W. Mizubayashi, H. Murakami, K. Shibahara, and S. Miyazaki, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/15/5/308 15, 485 (2000).
22. P. Mur, Appl. Surf. Sci. ASUSEE 0169-4332 175-176, 726 (2001).
23. M. Houssa, T. Nigam, P. W. Mertens, and M. M. Heyns, Solid-State Electron. SSELA5 0038-1101 10.1016/S0038-1101(98)00200-7 43, 159 (1999).
24. O. Maida, H. Yamamoto, N. Okada, T. Kanashima, and M. Okuyama, Appl. Surf. Sci. ASUSEE 0169-4332 130-132, 214 (1998).
25. A. Crossley, C. J. Sofield, J. P. Goff, A. C. I. Lake, M. T. Hutchings, and A. Menelle, J. Non-Cryst. Solids JNCSBJ 0022-3093 10.1016/0022-3093(95) 00216-2 187, 221 (1995a).
26. S. Lombardo, J. H. Stathis, B. P. Linder, T. Watson, K. L. Pey, F. Palumbo, and C. H. Tung, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2147714 98, 121301 (2005).
27. B. P. Linder and J. H. Stathis, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2003.12.010 72, 24 (2004).
28. J. Verweij and J. Klootwijk, Microelectron. J. MICEB9 0026-2692 10.1016/0026-2692(95)00104-2 27, 611 (1996).
29. A. Crossley, C. J. Sofield, J. P. Goff, A. C. I. Lake, M. T. Hutchings, and A. Menelle, J. Non-Cryst. Solids JNCSBJ 0022-3093 10.1016/0022-3093(95) 00216-2 187, 221 (1995b).
30. W. Kern, Handbook of Semiconductor Wafer Cleaning Technology-Science, Technology, and Applications (Noyes, New York, 1993).
31. S. V. Walstra and C.-T. Sah, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.595942 44, 1136 (1997).
32. E. Vincent, G. Ghibaudo, G. Morin, and C. Papadas, Proceedings of the IEEE International Conference on Microelectronic Test Structures, Monterey, CA, 1997 (unpublished), pp. 105-110.
33. C. P. Ho and J. D. Plummer, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2129320 126, 1516 (1979).
34. C. P. Ho and J. D. Plummer, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2129321 126, 1523 (1979).
35. R. H. Fowler and L. W. Nordheim, Proc. R. Soc. London, Ser. A PRLAAZ 0950-1207 10.1098/rspa.1928.0091 119, 173 (1928).
36. M. Lenzlinger and E. H. Snow, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1657043 40, 278 (1969).
37. Z. Weinberg, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.331336 53, 5052 (1982).
38. H. C. Card, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(74) 90414-1 14, 1011 (1974).