Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells

Applied Physics Letters

Volumn 87, Issue 25, 2005, Pages 1-3

  Hantke, K ^a   Heber, J D ^a   Chatterjee, S ^a   Klar, P J ^a   Volz, K ^a   Stolz, W ^a   Ruhle W W ^a   Polimeni, A ^b   Capizzi, M ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; HYDROGENATION; NITROGEN; PHOTOLUMINESCENCE; RADIATION;

CARRIER RELAXATION; DEEP TRAPS; NONRADIATIVE RECOMBINATION; PHOTOLUMINESCENCE DECAY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 29144478737     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2149154     Document Type: Article

References (21)

1. I. A. Buyanova and W. M. Chen, in Optoelectronic Properties of Semiconductors and Superlattices, edited by, M. O. Manasreh, (Taylor and Francis, New York, 2004) and references therein.
2. J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch, Appl. Phys. Lett. 84, 747 (2004).
3. B. Q. Sun, M. Gal, Q. Gao, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. 81, 4368 (2002).
4. A. Polimeni, F. Masia, A. Vinattieri, G. Baldassarri Höger von Högersthal, and M. Capizzi, Appl. Phys. Lett. 84, 2295 (2004).
5. A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel, Phys. Rev. B 63, 201304 (2001).
6. A. Janotti, S. B. Zhang, S. H. Wei, and C. G. Van de Walle, Phys. Rev. Lett. 89, 086403 (2002).
7. A. Amore Bonapasta, F. Filippone, P. Giannozzi, M. Capizzi, and A. Polimeni, Phys. Rev. Lett. 89, 216401 (2002).
8. A. Amore Bonapasta, F. Filippone, and P. Giannozzi, Phys. Rev. B 68, 115202 (2003).
9. P. J. Klar, H. Grüning, M. Güngerich, W. Heimbrodt, J. Koch, T. Torunski, and W. Stolz, Phys. Rev. B 67, 121206 (2003).
10. P. J. Klar, H. Grüning, W. Heimbrodt, G. Weiser, J. Koch, K. Volz, W. Stolz, S. W. Koch, S. Tomic, S. A. Choulis, T. J. C. Hosea, E. P. O'Reilly, M. Hofmann, J. Hader, and J. V. Moloney, Semicond. Sci. Technol. 17, 830 (2002).
11. K. Uno, M. Yamada, I. Tanaka, O. Ohtsuki, and T. Takizawa, J. Cryst. Growth 278, 214 (2005).
12. P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, and W. Heimbrodt, Phys. Rev. B 64, 121203 (2001).
13. M. Albrecht, V. Grillo, T. Remmele, H. P. Strunk, A. Y. Egorov, G. Dumitras, H. Riechert, A. Kaschner, R. Heitz, and A. Hoffmann, Appl. Phys. Lett. 81, 2719 (2002).
14. L. Bellaiche, S. H. Wei, and A. Zunger, Phys. Rev. B 54, 17568 (1996).
15. G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, and M. Capizzi, Phys. Rev. B 71, 201301 (2005).
16. S. D. Baranovskii, R. Eichmann, and P. Thomas, Phys. Rev. B 58, 13081 (1998).
17. The back sweep in the streak camera system has to be taken into account in case of long decay times which are comparable to the time between two subsequent laser pulses. The transients shown are corrected for this artifact [K. Hantke, J. D. Heber, C. Schlichenmaier, A. Thränhardt, T. Meier, B. Kunert, K. Volz, W. Stolz, S. W. Koch, and W. W. Rühle, Phys. Rev. B 71, 165320 (2005)].
18. A. Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, and A. Forchel, Appl. Phys. Lett. 82, 2805 (2003) and references therein.
19. R. A. Street, T. M. Searle, and I. G. Augustin, in Amorphous and Liquid Semiconductors, edited by, J. Stuke, and, W. Brenig, (Taylor and Francis, London, 1974), p. 953.
20. L. Grenouillet, C. Bru-Chevallier, G. Guillot, P. Gilet, P. Duvaut, C. Vannuffel, A. Million, and A. Chenevas-Paule, Appl. Phys. Lett. 76, 2241 (2000).
21. F. A. J. M. Driessen, G. J. Bauhuis, S. M. Olsthoorn, and L. J. Giling, Phys. Rev. B 48, 7889 (1993).