E+ transition in Ga As1-x Nx and Ga As1-x Bix due to isoelectronic- impurity-induced perturbation of the conduction band

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 15, 2007, Pages

  Fluegel, B ^a   Mascarenhas, A ^a   Ptak, A J ^a   Tixier, S ^b   Young, E C ^b   Tiedje, T ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35648931550     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.155209     Document Type: Article

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