Characteristics of transparent SiNx thin-film passivation layer grown by CECVD for top-emitting OLEDs

Journal of the Electrochemical Society

Volumn 154, Issue 12, 2007, Pages

  Jeong, Jin A ^a   Jeong, Soon Wook ^a   Park, No Jin ^a   Kang, Jae Wook ^b   Kim, Jong Kuk ^b   Kim, Do Geun ^b   Kim, Han Ki ^a  

^a Kumoh National Institute of Technology   (South Korea)

^b Korea Institute of Machine and Materials   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; OPTICAL PROPERTIES; PASSIVATION; PHOTOCATALYSIS; SILICON NITRIDE; THIN FILMS;

NONPASSIVATED REFERENCE SAMPLES; PASSIVATION LAYERS; SUBSTRATE TEMPERATURE; TUNGSTEN CATALYZERS;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 35548969235     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2789948     Document Type: Article

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