High brightness GaInAs/(Al)GaAs quantum dots tapered lasers at 980 nm with a high wavelength stability

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5365, Issue , 2004, Pages 60-71

  Auzanneau, Sophie Charlotte ^a   Calligaro, Michel ^a   Krakowski, Michel ^a   Deubert, Stefan ^b   Reithmaier, Johann Peter ^b   Forchel, Alfred ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

980 nm; Bar of laser diodes; Beam quality; Gain guiding; High brightness laser diode; Index guiding; Quantum dots; Semiconductor laser; Tapered laser structure; Wavelength stability

Indexed keywords

ANTIREFLECTION COATINGS; OPTICAL PUMPING; POWER AMPLIFIERS; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

980 NM; BAR OF LASER DIODES; BEAM QUALITY; GAIN GUIDING; HIGH BRIGHTNESS LASER DIODES; INDEX GUIDING; TAPERED LASER STRUCTURES; WAVELENGTH STABILITY;

QUANTUM WELL LASERS;

EID: 3543069327     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.529060     Document Type: Conference Paper

References (17)

1. S. O'Brien, D.F. Welch, R.A Parke, D. Mehuys, K. Durzo, R.J. Lang, R. Waarts, D. Scifres, "Operating characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifier", IEEE J. of Quantum Electronics, vol. 23, n° 6, June 1993, pp. 2052-2057
2. R.M. Lammert, J.E. Ungar, M.L. Osowski, H.Qi, M.A. Newkirk, N.Bar Chaim "980nm master oscillator power amplifiers with nonabsorbing mirrors", IEEE Photonics Technology Letters, vol. 11, n°9, September 1999
3. E.S.Kintzer, J.N.Walpole, S.R.Chinn, C.A.Wang, L.J.Missaggia, "High power, strained layer amplifiers and lasers with tapered gain region", IEEE Photonics Technology Letters, vol.5, n°6, June 1993, pp 605-608
4. M.Mikulla, P.Chazan, A. Schmitt, A; Wetzel, M. Walther, R. Kiefer, W. Pletschen, J.Braunstein, G. Weimann, "High brightness tapered semiconductor laser oscillators and amplifiers with low modal gain epilayer structures", IEEE Photonics Technology Letters, vol. 10, n°5, May 1998, pp 654-656
5. th January 1999, vol.35, n°1, pp 43-44
6. M.Krakowski, S.C.Auzanneau, F.Berlie, M.Calligaro, Y.Robert, O.Parillaud, M.Lecomte., "1W, high brightness, index guided tapered laser at 980nm using Al-free active region materials.", Electron. Lett., vol. 39, n° 15, pp. 1122-1123.
7. S.C. Auzanneau, M. Krakowski, F. Berlie, M. Calligaro, Y. Robert, O. Parillaud, M. Lecomte, B. Boulant, T. Fillardet, "High power and high brightness laser diode structures at 980nm using an Al-free active region.", Proceedings of SPIE, Photonics West 2003, vol. 4995, p. 184-195.
8. G.T. Liu, A. Sintz, H. Li, K.J. Malloy, L.F. Lester, Electron. Lett. 35, 1163 (1999)
9. F. Klopf, J.P. Reithmaier, A. Forchel, Appl. Phys. Lett. 77, 1419 (2000)
10. K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, H. Ishikawa, IEEE J. Quantum Electron. 36, 472 (2000)
11. F. Klopf, R. Krebs, A. Wolf, M. Emmerling, J.P. Reithmaier, A.Forchel, Electron. Lett. 37, 634 (2001)
12. P.M. Varangis, H. Li, G.T. Liu, T.C. Newell, A. Stintz, B. Fuchs, K.J. Malloy, L.F. Lester, Electron. Lett. 36, 1544 (2000)
13. F. Klopf, J.P. Reithmaier, A. Forchel, P. Collot, M. Krakowski, M. Calligaro, Electron. Lett. 37, 353 (2001).
14. F. Klopf, S. Deubert, J.P. Reithmaier, A. Forchel, Appl. Phys. Lett. 81, 217 (2002)
15. J.N.Walpole, "Semiconductor amplifiers and lasers with tapered gain regions", Optical and Quantum Electronics, 28 (1996), pp. 623-645
16. C. Larat, M. Krakowski, M. Calligaro, S.C. Auzanneau, O. Parillaud, B. Boulant, A. Laugustin, T. Fillardet, Ph. Bousselet, F. Leplingard and D. Bayart, '5W 100μm fibre-coupled 977nm pump source. +29.2dBm EDFA output demonstration.', Proceedings of ECOC 2002, vol.1, pp. 1.3.5.
17. S. Delepine, F. Gerard, A. Pinquier, T. Fillon, J. Pasquier, D. Locatelli, J.-P. Chardon, H. K. Bissesur, N. Bouché, F. R. Boubal, P. Salet, "How to launch 1W into single-mode fiber from a single 1.48-μm flared resonator", IEEE J. of Selected Topics in Quantum Electronics, vol. 7, n°2, March/April 2001 pp. 111-123