9.5W CW output power from high brightness 980 nm InGaAs/AlGaAs tapered laser arrays

Electronics Letters

Volumn 35, Issue 1, 1999, Pages 43-45

  Wilson, F J ^a   Lewandowski, J J ^a   Nayar, B K ^a   Robbins, D J ^a   Williams, P J ^a   Carr, N ^a   Robson, F O ^a  

^a GEC Marconi Materials Technology Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

LASER BEAMS; MIRRORS; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

TAPERED LASER ARRAYS;

SEMICONDUCTOR LASERS;

EID: 0033530980     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990064     Document Type: Article

References (6)

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2. WILLIAMS, P.J., LEWANDOWSKI, J.J., ROBBINS, D.J., WOOD, A.K., ROBSON, F.O., and NAYAR, B.K.: 'Tapered laser arrays for high power operation (>1.4W CW) at 1.59μm for applications in surgery', Electron. Lett., 1998, 34, (10), pp. 993-994
3. MAWST, L.J., BHATTACHARYA, A., LOPEZ, J., BOTEZ, D., GARBUZOV, D.Z., DEMARCO, L., CONNOLLY, J.C., JANSEN, M., FANG, F., and NABIEV, R.F.: '8W continuous wave front-facet power from broad-waveguide Al-free 980nm diode lasers', Appl. Phys. Lett., 1996, 69, (11), pp. 1532-1534
4. BOUR, D.P., and ROSEN, A.: Optimum cavity length for high conversion efficiency quantum well diode lasers', J. Appl. Phys., 1989, 66, (7), pp. 2813-2818
5. YANG, H., MAWST, L.J., NESNIDAL, M., LOPEZ, J., BHATTACHARYA, A., and BOTEZ, D.: '10W near-diffraction limited peak pulsed power from Al-free, 0.98μm-emitting phase-locked antiguiding arrays', Electron. Lett., 1997, 33, (2), pp. 136-137
6. MEHUYS, D., O'BRIEN, S., LANG, R.J., HARDY, A., and WELCH, D.F.: '5W diffraction-limited, tapered-stripe unstable resonator semiconductor laser', Electron. Lett., 1994, 30, (22), pp. 1855-1856