980-nm master oscillator power amplifiers with nonabsorbing mirrors

IEEE Photonics Technology Letters

Volumn 11, Issue 9, 1999, Pages 1099-1101

  Lammert, R M ^a   Ungar, J E ^a   Osowski, M L ^a   Qi, H ^a   Newkirk, M A ^a   Bar Chaim, N ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; ELECTROMAGNETIC WAVE DIFFRACTION; MIRRORS; POWER AMPLIFIERS; SINGLE MODE FIBERS;

HIGH-POWER MASTER OSCILLATOR POWER AMPLIFIERS; SIDEMODE SUPPRESSION RATIO;

SEMICONDUCTOR LASERS;

EID: 0032595739     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.784169     Document Type: Article

References (14)

1. J. E. Ungar, "Single frequency high power semiconductor lasers," U.S. Patent 4856017, Aug. 1989.
2. D. F. Welch, R. Parke, D. Mehuys, A. Hardy, R. Lang, S. O'Brien, and D. Scifres, "1.1 W CW, diffraction-limited operation of a monolithically integrated flared-amplifier master oscillator power amplifier," Electron. Lett., vol. 28, pp. 2011-2013, 1992.
3. S. O'Brien, D. F. Welch, R. A. Parke, D. Mehuys, K. Dzurko, R. J. Lang, R. Waarts, and D. Scifres, "Operating characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifier," IEEE J. Quantum Electron., vol. 29, pp. 2054-2057, 1993.
4. A. Egan, C. Z. Ning, J. V. Moloney, R. A. Indik, M. W. Wright, D. J. Bosset, and J. G. McInerney, "Dynamic instabilities in master oscillator power amplifier semiconductor laser," IEEE J. Quantum Electron., vol. 34, pp. 166-170, 1998.
5. M. W. Wright and D. J. Bossert, "Temporal dynamics and facet coating requirements of monolithic MOPA semiconductor lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 504-506, 1998.
6. J. V. Moloney, A. Egan, C. Z. Ning, and R. A. Indik, "Spontaneous spatiotemporal instabilities in current modulated master oscillator power amplifier lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 1229-1231, 1998.
7. D. J. Gallant, M. L. Tilton, D. J. Bossert, and G. C. Dente, "Optimized single-layer antireflection coatings for semiconductor lasers," IEEE Photon. Technol. Lett., vol. 9, pp. 300-302, 1997.
8. R. Prakasam, S. Fox, B. P. Gopalan, S. Kareenahalli, P. J. S. Heim, and M. Dagenais, "Practical approach to design and fabrication of antireflection coatings for semiconductor optical amplifiers," IEEE Photon. Technol. Lett., vol. 8, pp. 509-511, 1996.
9. M. Aoki, M. Suzuki, T. Taniwatari, H. Sano, and T. Kawano, "New photonic device integration by selective-area MOVPE and its application to optical modulator/laser integration," Microwave Opt. Technol. Lett., vol. 7, pp. 132-139, 1994.
10. R. M. Lammert, J. E. Ungar, S. W. Oh, H. Qi, J. S. Chen, and N. Bar Chaim, "980 nm high-power high-dlope efficiency distributed feedback lasers with nonabsorbing mirrors," Electron. Lett., vol. 34, pp. 1663-1664, 1998.
11. T. M. Cockerill, J. Honig, D. V. Forbes, and J. J. Coleman, "Distributed feedback strained layer quantum well heterostructure 980 nm laser fabricated by two-step metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 62, pp. 820-822, 1993.
12. P. York, N. Hughes, J. Connolly, and T. Zamerowski, "MOCVD regrowth over GaAs/AlGaAs gratings for high power long-lived InGaAs/AlGaAs lasers," presented at the 6th Int. Conf. Metalorganic Vapor Phase Epitaxy, Cambridge, MA, 1992.
13. M. Mikulla, P. Chazan, A. Schmitt, S. Morgott, A. Wetzel, M. Walther, R. Kiefer, W. Pletshen, J. Braunstein, and G. Weimann, "High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures," IEEE Photon. Technol. Lett., vol. 10, pp. 654-656, 1998.
14. J. C. Livas, S. R. Chinn, E. S. Kintzer, J. N. Walpole, C. A. Wang, and L. J. Missaggia, "High-power erbium-doped fiber amplifier with 975 nm tapered-gain-region laser pumps," Electron. Lett., vol. 30, pp. 1054-1055, 1994.