High power and high brightness laser diode structures at 980nm using an Al-free active region

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4995, Issue , 2003, Pages 184-195

  Auzanneau, Sophie Charlotte ^a   Krakowski, Michel ^a   Berlie, François ^a   Calligaro, Michel ^a   Robert, Yannick ^a   Parillaud, Olivier ^a   Lecomte, Michel ^a   Boulant, Benoit ^b   Fillardet, Thierry ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b THALES   (France)

Author keywords

980 nm; Bar of laser diodes; Beam quality; Broad area laser; Gain guiding; High brightness laser diode; High power laser diode; Index guiding; Reliability; Semiconductor laser; Tapered laser structure

Indexed keywords

ALUMINUM; DIODES; FIBER LASERS; HIGH POWER LASERS; STRUCTURE (COMPOSITION); WAVELENGTH DIVISION MULTIPLEXING;

BEAM QUALITY;

SEMICONDUCTOR LASERS;

EID: 0042103232     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.475765     Document Type: Conference Paper

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