Optical properties of a Si delta-doped InGaNGaN quantum well with ultraviolet emission

Journal of Applied Physics

Volumn 102, Issue 7, 2007, Pages

  Kwon, Min Ki ^a   Park, Il Kyu ^a   Kim, Ja Yeon ^a   Kim, Jeom Oh ^a,c   Seo, Seong Bum ^a,b   Park, Seong Ju ^a   Min, Kyeongik ^b   Park, Gil Han ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON INJECTION; GALLIUM NITRIDE; HOLE CONCENTRATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION; VALENCE BANDS;

CARRIER INJECTION; HOLE CONFINEMENT; SINGLE QUANTUM WELL; ULTRAVIOLET EMISSION;

SEMICONDUCTING SILICON;

EID: 35348814961     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2794714     Document Type: Article

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