Fabrication of high-performance 370 nm ultraviolet light-emitting diodes

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 48-52

  Wang, H X ^a,c   Li, H D ^b   Lee, Y B ^b   Sato, H ^a   Yamashita, K ^a   Sugahara, T ^b   Sakai, S ^b  

^a Nitride Semiconductors Co Ltd   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

^c Kochi Industrial Promotion Center ^*  (Japan)

Author keywords

A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. GaN; B3. Ultraviolet light emitting diodes

Indexed keywords

CHARACTERIZATION; ELECTROLUMINESCENCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

INJECTION CURRENT; LIGHT EMISSION EFFICIENCY; ULTRAVIOLET LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 1342306682     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.030     Document Type: Article

References (11)

1. Nakamura S., Fasol G. The Blue Laser Diode. 1997;Springer, Tokyo.
2. Nakamura S., Senoh M., Iwasa N., Nagahama S., Yamada T., Mukai T. Jpn. J. Appl. Phys. 34:1995;L1332.
3. Mukai T., Morita D., Nakamura S. J. Crystal Growth. 189/190:1998;778.
4. Mukai T., Yamada M., Nakamura S. Jpn. J. Appl. Phys. 37:1998;L1358.
5. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., Chocho K. Jpn. J. Appl. Phys. 36:1997;L1568.
6. Deguchi T., Sekiguchi K., Nakamura A., Sota T., Matsuo R., Chichibu S., Nakamura S. Jpn. J. Appl. Phys. 38:1999;L914.
7. Le Thomas N., Pelekanos N.T., Hatzopoulos Z., Aperathitis E., Hamelin R. Appl. Phys. Lett. 81:2002;1582.
8. Ortiz V., Pelekanos N.T., Mula G. Appl. Phys. Lett. 72:1998;963.
9. Aumer M.E., LeBoeuf S.F., Moody B.F., Bedair S.M. Appl. Phys. Lett. 79:2001;3803.
10. Nishida T., Saito H., Kobayashi N. Appl. Phys. Lett. 78:2001;3927.
11. Y.B. Lee, T. Wang, Y.H. Liu, J.P. Ao, Y. Izumi, Y. Lacroix, H.D. Li, J. Bai, Y. Naoi, S. Sakai, Jpn. J. Appl. Phys. (Part I) 41 (2002) 4450.