Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 458-461

  Kakuda, Naoki ^a   Yoshida, Takayuki ^a   Yamaguchi, Koichi ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; BUFFER LAYERS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; TWO DIMENSIONAL;

CAPPING LAYERS; ROOM TEMPERATURE; SURFACE MIGRATION; WETTING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34748862986     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381225     Document Type: Conference Paper

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