High density InAs/GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition

Applied Physics Letters

Volumn 89, Issue 18, 2006, Pages

  Guimard, Denis ^a   Nishioka, Masao ^b   Tsukamoto, Shiro ^b   Arakawa, Yasuhiko ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COALESCENCE; GROUND STATE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ACTIVE AGENTS;

DOT DENSITY; EMISSION BLUESHIFT; PHOTOLUMINESCENCE INTENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33750714060     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2385209     Document Type: Article

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