DLTS study of n-type GaN grown by MOCVD on GaN substrates

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 268-273

  Tokuda, Y ^a   Matsuoka, Y ^a   Ueda, H ^b   Ishiguro, O ^b   Soejima, N ^b   Kachi, T ^b  

^a AICHI INSTITUTE OF TECHNOLOGY   (Japan)

^b Rd Management Section   (Japan)

Author keywords

DLTS; GaN on GaN; Trap concentration

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SCHOTTKY BARRIER DIODES;

DISLOCATION DENSITY; HOMOEPITAXIAL GROWTH; TRAP CONCENTRATION;

GALLIUM NITRIDE;

EID: 33845209582     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.07.025     Document Type: Article

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