Thermal stability and electrical resistivity of SiTaNx heating layer for phase-change memories

Journal of the Electrochemical Society

Volumn 153, Issue 7, 2006, Pages

  Cheng, Huai Yu ^a   Chen, Yi Chen ^b   Lee, Chain Ming ^b   Chung, Ren Jei ^a   Chin, Tsung Shune ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; BINDING ENERGY; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; HEATING; PHASE SHIFT; RANDOM ACCESS STORAGE; THERMODYNAMIC STABILITY;

AMORPHOUS STRUCTURE; HEATING LAYERS; NITROGEN CONTENTS;

SILICON COMPOUNDS;

EID: 33744831501     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2196727     Document Type: Article

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