Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO 2/Si structure

Applied Physics Letters

Volumn 80, Issue 13, 2002, Pages 2296-2298

  Li, S ^a   Dong, Z L ^a   Latt, K Maung ^a   Park, H S ^a   White, T ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Environmental Technology Institute   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL FORMATION; CU DIFFUSION; INTERNAL ENERGIES; RECOVERY PROCESS; TRIPLE JUNCTION;

DIFFUSION; GRAIN BOUNDARIES; PITTING; STACKING FAULTS; TANTALUM OXIDES;

TANTALUM;

EID: 79955983187     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1465107     Document Type: Article

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