메뉴 건너뛰기




Volumn , Issue , 2007, Pages 238-241

C-Si surface passivation for photovoltaic applications by means of antireflective amorphous silicon carbide layers

Author keywords

Amorphous materials; Annealing; Carbon compounds; Passivation; Photovoltaic cells

Indexed keywords

AMORPHOUS SILICON; ANNEALING; COMPUTER SIMULATION; PHOTOVOLTAIC CELLS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 35148894193     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2007.384036     Document Type: Conference Paper
Times cited : (5)

References (12)
  • 3
  • 4
    • 27744609122 scopus 로고    scopus 로고
    • Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface
    • Sept
    • R. Ferre, "Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface" Appl. Phys. Lett. vol. 87, p. 202109, Sept. 2005
    • (2005) Appl. Phys. Lett , vol.87 , pp. 202109
    • Ferre, R.1
  • 5
    • 33749995746 scopus 로고    scopus 로고
    • N-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers
    • R. Ferre, "N-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers", J. Appl. Phys. vol 100, p. 073703, (2006)
    • (2006) J. Appl. Phys , vol.100 , pp. 073703
    • Ferre, R.1
  • 7
    • 0000513411 scopus 로고    scopus 로고
    • Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
    • R.A. Sinton, "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data", Appl. Phys. Lett. vol 69, p. 2510 (1996).
    • (1996) Appl. Phys. Lett , vol.69 , pp. 2510
    • Sinton, R.A.1
  • 8
    • 33845421788 scopus 로고    scopus 로고
    • General parametrization of Auger recombination in crystalline silicon
    • M.J. Kerr, "General parametrization of Auger recombination in crystalline silicon", J. Appl. Phys. vol. 91, p. 2473 (2002)
    • (2002) J. Appl. Phys , vol.91 , pp. 2473
    • Kerr, M.J.1
  • 9
    • 0023961305 scopus 로고
    • 2 interface recombination parameters using a gate-controlled point-junction diode under illumination
    • 2 interface recombination parameters using a gate-controlled point-junction diode under illumination", IEEE Trans. Electron Dev. vol. 35, p. 203 (1988)
    • (1988) IEEE Trans. Electron Dev , vol.35 , pp. 203
    • Girisch, R.B.M.1
  • 10
    • 1542306857 scopus 로고    scopus 로고
    • Experimental verification of the effect of depletion-region modulation on photoconductance lifetime measurements
    • P. J. Cousins, "Experimental verification of the effect of depletion-region modulation on photoconductance lifetime measurements" J. Appl. Phys. vol 95, p. 1854 (2004)
    • (2004) J. Appl. Phys , vol.95 , pp. 1854
    • Cousins, P.J.1
  • 11
    • 0001420554 scopus 로고    scopus 로고
    • 2 - Si interface
    • 2 - Si interface", J. Appl. Phys. vol. 86, p. 683 (1999)
    • (1999) J. Appl. Phys , vol.86 , pp. 683
    • Glunz, S.W.1
  • 12
    • 0001524926 scopus 로고    scopus 로고
    • Parameterization of the optical functions of amorphous materials in the interband region
    • E. Jellison, "Parameterization of the optical functions of amorphous materials in the interband region" Appl. Phys. Lett. vol. 69, p. 371 (1996)
    • (1996) Appl. Phys. Lett , vol.69 , pp. 371
    • Jellison, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.