Effect of oxide thickness on the capacitance and conductance characteristics of MOS structures

Physica B: Condensed Matter

Volumn 400, Issue 1-2, 2007, Pages 168-174

  Tugluoglu N ^a   Karadeniz, S ^a   Birkan Selcuk A ^a   Bilge Ocak, S ^a  

^a Saraykoy Nuclear Research and Training Center   (Turkey)

Author keywords

C V; G V; Interface states; MOS schottky diodes; Series resistance; SnO2

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; FILM THICKNESS; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS;

INTERFACE STATES; MOS SCHOTTKY DIODES; OXIDE LAYER THICKNESS; SERIES RESISTANCE;

MOS DEVICES;

EID: 35148855884     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.07.004     Document Type: Article

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