Investigation of 193 nm resist and plasma interactions during an oxide etching process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 II, Issue , 2003, Pages 847-857

  Mortini, Benedicte ^a   Spinelli, Philippe ^a   Leverd, François ^a   Dejonghe, Veronique ^b   Braspenning, Richard ^b  

^a STMICROELECTRONICS   (France)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

193 nm methacrylate resists; Deprotection reaction; Etch behavior; FTIR

Indexed keywords

ACRYLICS; CATHODES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GLASS TRANSITION; OPTIMIZATION; OXIDES; PHYSICAL PROPERTIES; PLASMA ETCHING; PLASTIC FILMS; SURFACE ROUGHNESS; TEMPERATURE;

CARBONYL GROUPS; CATHODE TEMPERATURE; CHEMICALLY AMPLIFIER RESISTS; DEPROTECTION REACTION; ETCH BEHAVIOR; METHACRYLATE RESISTS; PHOTO ETCH; PHYSICO CHEMICAL PROPERTIES;

PHOTORESISTS;

EID: 0141834125     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485128     Document Type: Conference Paper

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