메뉴 건너뛰기




Volumn 6521, Issue , 2007, Pages

Double patterning technology: Process-window analysis in a many-dimensional space

Author keywords

Double patterning; DPT; Process window

Indexed keywords

DATA STORAGE EQUIPMENT; ERROR ANALYSIS; ETCHING; GRAPHIC METHODS; IMAGE ANALYSIS; STATISTICAL METHODS; IMAGE RECONSTRUCTION; PATTERN RECOGNITION;

EID: 35148852663     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.711515     Document Type: Conference Paper
Times cited : (13)

References (10)
  • 2
    • 3843049043 scopus 로고    scopus 로고
    • Extension of 193-nm immersion optical lithography to the 22-nm half-pitch node
    • S. R. J. Brueck and A. M. Biswas, "Extension of 193-nm immersion optical lithography to the 22-nm half-pitch node," Proc. SPIE Vol. 5377, 1315-1322 (2004)
    • (2004) Proc. SPIE , vol.5377 , pp. 1315-1322
    • Brueck, S.R.J.1    Biswas, A.M.2
  • 3
    • 24744436451 scopus 로고    scopus 로고
    • Contact hole formation by multiple exposure technique in ultra-low kl lithography
    • H. Nakamura et al., "Contact hole formation by multiple exposure technique in ultra-low kl lithography," J. Microlith., Microfab., Microsyst. 4(2), 023005 (2005)
    • (2005) J. Microlith., Microfab., Microsyst , vol.4 , Issue.2 , pp. 023005
    • Nakamura, H.1
  • 4
    • 25144436878 scopus 로고    scopus 로고
    • Double Patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193 nm
    • M. Maenhoudt et al., "Double Patterning scheme for sub-0.25 k1 single damascene structures at NA=0.75, λ=193 nm," Proc. SPIE Vol. 5754, 1508-1518 (2005).
    • (2005) Proc. SPIE , vol.5754 , pp. 1508-1518
    • Maenhoudt, M.1
  • 5
    • 33745630371 scopus 로고    scopus 로고
    • Double exposure technology using silicon containing materials
    • S. Lee et al., "Double exposure technology using silicon containing materials," Proc. SPIE Vol. 6153, 6153IK (2006)
    • (2006) Proc. SPIE , vol.6153
    • Lee, S.1
  • 6
    • 33745777382 scopus 로고    scopus 로고
    • Positive and Negative Tone Double Patterning Lithography for 50nm Flash Memory
    • C.-H. Lim et al., "Positive and Negative Tone Double Patterning Lithography for 50nm Flash Memory," Proc. SPIE Vol. 6154, 61541O (2006)
    • (2006) Proc. SPIE , vol.6154
    • Lim, C.-H.1
  • 7
    • 33846617811 scopus 로고    scopus 로고
    • Feasibility study of mask fabrication in double exposure technology
    • J. G. Doh et al., "Feasibility study of mask fabrication in double exposure technology," Proc. SPIE Vol. 6349, 6349IU (2006)
    • (2006) Proc. SPIE , vol.6349
    • Doh, J.G.1
  • 8
    • 33846569993 scopus 로고    scopus 로고
    • Extension of 193 dry lithography to 45-nm half-pitch node: Double exposure and double processing technique
    • 63491P
    • A. Biswas et al., "Extension of 193 dry lithography to 45-nm half-pitch node: Double exposure and double processing technique," Proc. SPIE Vol. 6349, 63491P (2006)
    • (2006) Proc. SPIE , vol.6349
    • Biswas, A.1
  • 9
    • 33846635056 scopus 로고    scopus 로고
    • Process results using automatic pitch decomposition and double patterning technology (DPT) at k1eff<0.20
    • J. Huckabay et al., "Process results using automatic pitch decomposition and double patterning technology (DPT) at k1eff<0.20," Proc. SPIE Vol. 6349, 63491O (2006)
    • (2006) Proc. SPIE , vol.6349
    • Huckabay, J.1
  • 10
    • 33846591914 scopus 로고    scopus 로고
    • Application challenges with double pattering technology (DPT) beyond 45nm
    • J. Park et al., "Application challenges with double pattering technology (DPT) beyond 45nm," Proc. SPIE Vol. 6349, 634922 (2006)
    • (2006) Proc. SPIE , vol.6349 , pp. 634922
    • Park, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.