Double exposure technology using silicon containing materials

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6153 I, Issue , 2006, Pages

  Lee, Sungkoo ^a   Jung, Jaechang ^a   Cho, Sungyoon ^a   Lim, Chang Moon ^a   Bok, Cheolkyu ^a   Kim, Hyeongsoo ^a   Moon, Seungchan ^a   Kim, Jinwoong ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

ArF; Double exposure technology; Silicon containing BARC

Indexed keywords

ETCHING; LIGHT SOURCES; MASKS; OPTICS; SILICON;

ARF; DOUBLE EXPOSURE TECHNOLOGY; SILICON CONTAINING BARC;

LITHOGRAPHY;

EID: 33745630371     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.657077     Document Type: Conference Paper

References (7)

1. H. Meiling et. al., "Development of the ASML EUV alpha demo tool", Proc. SPIE 5751, p90 (2005)
2. Cheolkyu Bok, Ki-Lyoung Lee, Jun-Taek Park et. al, "0.31k1 ArF lithography for 70-nm DRAM", Proc. SPIE, 373. p230(2005)
3. Shu-Hao Hsu, Shu-Ping Fang, I. Hsuing Huang, Benjamin S. Lin, Kuei-Chun Hung, "Extension of ArF lithography for poly gate patterning of 65-nm generation and beyond", Proc. SPIE, 5377. p1214(2004)
4. Franklin M. Schellenberg, "Resolution enhancement technology: the past, the present, and extensions for the future", Proc. SPIE 5377, p1(2004)
5. Jan Mulkens, Bob Streefkerk, Martin Hoogendorp, "ArF immersion lithography using TWINSCAN technology", Proc. SPIE 5645, p196(2005)
6. S. Peng et. al., "Second Generation Fluids for 193 nm Immersion Lithography", Proc. SPIE 5754, p427 (2005)
7. Stephen Hsu, Jungchul Park, Douglas Van Den Broeke, J. Fung Chen, "Double exposure technique for 45nm node and beyond", Proc. SPIE 5992, p557(2005)