Extension of 193 nm dry lithography to 45-nm half-pitch node: Double exposure and double processing technique

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6349 II, Issue , 2006, Pages

  Melvin III, Lawrence S ^a   Biswas, Abani M ^a   Li, Jianliang ^a   Hiserote, Jay A ^a  

^a SYNOPSYS INC   (United States)

Author keywords

45 nm half pitch node; Double exposure; Focus latitude; OPC; Photolithography; Process nonlinearity

Indexed keywords

DOUBLE EXPOSURE; FOCUS LATITUDE; OPTICAL PROXIMITY CORRECTIONS (OPC); PROCESS NONLINEARITY;

COMPUTER SIMULATION; COST EFFECTIVENESS; FAST FOURIER TRANSFORMS; IMAGING TECHNIQUES; MASKS; NANOTECHNOLOGY;

PHOTOLITHOGRAPHY;

EID: 33846569993     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.692285     Document Type: Conference Paper

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