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In the saturation region (Vd> Vg-Vt, where Vt is the threshold voltage, Id can be described using equation: Id, W/2L)Cαμ(V g-Vt)2 where μ is the field-effect mobility, W is the channel width, L is the channel length and Co is the capacitance per unit area of the gate dielectric layer SiO2, 300 nm, Co, 11 nF cm-2
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