Facile fabrication method for pn -type and ambipolar transport polyphenylenevinylene-based thin-film field-effect transistors by blending C60 fullerene

Applied Physics Letters

Volumn 86, Issue 5, 2005, Pages 1-3

  Hayashi, Y ^a,b   Kanamori, H ^a,b   Yamada, I ^a,b   Takasu, A ^a,b   Takagi, S ^a,b   Kaneko, K ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRONIC STRUCTURE; FULLERENES; HETEROJUNCTIONS; THIN FILMS; TRANSPORT PROPERTIES;

AMBIPOLAR TRANSPORT; FACILE FABRICATION; FIELD-EFFECT GATED STRUCTURE; POLYPHENYLENEVINYLENE (PPV);

FIELD EFFECT TRANSISTORS;

EID: 18644375417     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1861115     Document Type: Article

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