Characteristics of submicron MOS varactors

2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

Volumn 2006, Issue , 2006, Pages 123-126

  Jenkins, Keith A ^a   Ainspan, Herschel ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Capacitance; MOS; MOS varactor; Q factor; Submicron; Tuning range; Varactor

Indexed keywords

CHANNEL LENGTH; MOS VARACTORS; SUBMICRONS; TUNING RANGE;

CAPACITANCE; MOS DEVICES; NATURAL FREQUENCIES; OPTIMIZATION; PARAMETER ESTIMATION; Q FACTOR MEASUREMENT;

VARACTORS;

EID: 33847057725     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2005.1587923     Document Type: Conference Paper

References (3)

1. F. Svelto, S. Manzini, and R. Castello, "A Three Terminal Varactor for RF ICs in Standard CMOS Technology," IEEE Transactions on Electron Devices, 47, pp. 893-895, 2000.
2. N. Fong, G. Tarr, N. Zamdmer, J.-O. Plouchart, and C. Plett, "Accumulation MOS Varactors for 4 to 40GHz VCOs in SOI CMOS," 2002 Int. SOI Conference, pp. 158-160.
3. H. Ainspan and J.-O. Plouchart, "A Comparison of MOS Varactors in Fully-Integrated CMOS LC VCOs at 5 and 7 GHz, "Proceedings of ESSCIRC, Stockholm, Sweden, 2000, pp. 447-450.