Challenges of total reflection X-ray fluorescence for surface- and thin-layer analysis

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 61, Issue 10-11 SPEC. ISS., 2006, Pages 1082-1090

  Klockenkamper R ^a  

^a LEIBNIZ INSTITUT FÜR ANALYTISCHE WISSENSCHAFTEN ISAS E V   (Germany)

Author keywords

GI XRF; Implantation layers; Sputter etching; TXRF; VPD; Wafer contamination

Indexed keywords

ABSORPTION; CONTAMINATION; MICROANALYSIS; SEMICONDUCTOR MATERIALS; SILICON WAFERS; VAPOR PHASE EPITAXY; X RAY SPECTROSCOPY;

GI-XRF; IMPLANTATION LAYERS; SPUTTER-ETCHING; TXRF; WAFER CONTAMINATION;

FLUORESCENCE;

EID: 34948837050     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2006.09.007     Document Type: Review

References (42)

1. Klockenkämper R. Total Reflection X-ray Fluorescence Analysis (1997), John Wiley and Sons, New York
2. CA (Chemical abstracts) online. Copyright 2005 American Chemical Society (ACS). xrs or xrf or x ray spectro; txrf or total reflection x ray fluorescence; faas or flame atomic absorption spectro; et aas or electrothermal aas; icp aes or inductively coupled plasma oes; icp ms or icp mass spectro.
3. Global Assessment Report. The Laboratory Life Science and Analytical Instrumentation Industry. 8th edition (2004), Strategic Directions International Inc., Los Angeles, USA published by
4. Tölg G., and Klockenkämper R. The role of total reflection X-ray fluorescence in atomic spectroscopy. Spectrochim. Acta Part B 48 (1993) 111-127
5. Mori Y., Uemura K., and Iizuka Y. Whole surface analysis of semi-conductor wafers by accumulating short-time mapping data of total reflection X-ray fluorescence spectrometry. Anal. Chem. 74 (2002) 1104-1110
6. M.A. Zaitz, Unique pattern of contamination on silicon wafers detected by surface profile total reflection X-ray fluorescence (SP-TXRF), Spectrochim. Acta Part B 61 (in press).
7. Huber A., Rath H.J., Eichinger P., Bauer Th., Kotz L., and Staudigl R. Sub-ppb monitoring of transition metal contamination of silicon wafer surfaces by VPD-TXRF. Proc. Electrochem. Soc. 88-20 (1988) 109-112
8. Neumann C., and Eichinger P. Ultra trace analysis of metallic contamination on silicon wafer surfaces by VPD-TXRF. Spectrochim. Acta Part B 46 (1991) 1369-1377
9. Pahlke S. Quo vadis total reflection X-ray fluorescence?. Spectrochim. Acta Part B 58 (2002) 2025-2038
10. Hall L.H., Sees J.A., and Schmidt B.L. Characterization and application of the vapour-phase decomposition technique for trace metal analysis on silicon oxide surfaces. Surf. Interface Anal. 24 (1996) 511-516
11. Buhrer G. Application of vapor phase decomposition/total reflection X-ray fluorescence in the silicon semiconductor manufacturing environment. Spectrochim. Acta Part B 54 (1999) 1399-1407
12. D. Hellin, TXRF saturation effects in atomic contamination analysis for advanced micro-electronic devices, PhD thesis, Katholike Universiteit Leuven, Faculteit Wetenschappen, Departement Chemie, 2005.
13. Miller T.C., Sparks C.M., Havrilla G.J., and Beebe M.R. Semiconductor applications of nanoliter droplet methodology with total reflection X-ray fluorescence analysis. Spectrochim. Acta Part B 59 (2004) 1117-1124
14. Lemmo A.V., Fisher J.T., Geysen H.M., and Rose D.J. Characterization of an inkjet chemical microdispenser for combinatorial library synthesis. Anal. Chem. 69 (1997) 543-551
15. de Boer D.K.G. Glancing-incidence X-ray fluorescence of layered materials. J. Phys. Rev., B 44 (1991) 498-511
16. de Boer D.K.G., and van den Hoogenhof W.W. Total reflection X-ray fluorescence of single and multiple thin layer samples. Spectrochim. Acta Part B 46 (1991) 1323-1331
17. Weisbrod U., Gutschke R., Knoth J., and Schwenke H. Total reflection X-ray fluorescence spectrometry for quantitative surface and layer analysis. Appl. Phys., A 53 (1991) 449-456
18. Awaji N. Wavelength dispersive grazing incidence X-ray fluorescence of multilayer thin films. Spectrochim. Acta Part B 59 (2004) 1133-1139
19. Streli C., Pepponi G., Wobrauschek P., Beckhoff B., Ulm G., Pahlke S., Fabry L., Ehmann Th., Kanngieβer B., Malzer W., and Jark W. Analysis of low Z elements on Si wafer surfaces with undulator radiation induced total reflection X-ray fluorescence at the PTB beamline at BESSY. Spectrochim. Acta Part B 58 (2003) 2113-2121
20. Klockenkämper R., Becker H.W., Bubert H., Jenett H., and von Bohlen A. Depth profiles of a shallow implanted layer in a Si wafer determined by different methods of thin-layer analysis. Spectrochim. Acta Part B 57 (2002) 1593-1599
21. Pepponi G., Streli C., Wobrauschek P., Zoeger N., Luening K., Pianetta P., Giubertoni G., Barozzi M., and Bersani M. Nondestructive dose determination and depth profiling of arsenic ultrashallow junctions with total reflection X-ray fluorescence analysis compared to dynamic secondary ion mass spectrometry. Spectrochim. Acta Part B 59 (2004) 1243-1249
22. Klockenkämper R., von Bohlen A., Becker H.W., and Palmetshofer L. Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total-reflection X-ray fluorescence analysis after repeated stratified etching and by Rutherford backscattering spectrometry. Surf. Interface Anal. 27 (1999) 1003-1008
23. Krzyzanowska H., von Bohlen A., and Klockenkämper R. Depth profiles of shallow implanted layers by soft ion sputtering and total reflection X-ray fluorescence. Spectrochim. Acta Part B 58 (2003) 2059-2067
24. Klockenkämper R., Krzyzanowska H., and von Bohlen A. Density-depth profiles of an As-implanted Si wafer studied by repeated planar sputter etching and total reflection X-ray fluorescence analysis. Surf. Interface Anal. 35 (2003) 829-834
25. Klockenkämper R., Becker M., von Bohlen A., Becker H.W., Krzyzanowska H., and Palmetshofer L. Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection X-ray fluorescence. J. Appl. Phys. 98 (2005) 033517-1-5
26. Noma T., and Iida A. Surface analysis of layered thin films using synchrotron X-ray microbeam combined with grazing-exit condition. Rev. Sci. Instrum. 65 (1994) 837-844
27. Tsuji K., and Delalieux F. Feasibility study of three-dimensional XRF-spectrometry using μ-X-ray beams under grazing-exit conditions. Spectrochim. Acta Part B 58 (2003) 2233-2238
28. Claes M., de Bokx P., and Van Grieken R. Progress in laboratory grazing emission X-ray fluorescence spectrometry. X-Ray Spectrom. 28 (1999) 224-229
29. Tsuji K., Spolnik Z., Wagatsuma K., Zhang J., and Van Grieken R. Enhancement of electron-induced X-ray intensity for single particles under grazing-exit conditions. Spectrochim. Acta Part B 54 (1999) 1243-1251
30. Huang T.C., and Parrish W. Characterization of single- and multiple-layer films by X-ray reflectometry. Adv. X-ray Anal. 35 (1992) 137-142
31. Huang T.C. Grazing incidence X-ray analysis of surfaces and thin films. Adv. X-ray Anal. 35 (1992) 143-150
32. Kawai J., Hayakawa S., Kitajima Y., and Gohshi Y. X-ray absorption and photoelectron spectroscopies using total reflection X-rays. Anal. Sci. 11 (1995) 519-524
33. Kawai J., Hayakawa S., Kitajima Y., Maeda K., and Gohshi Y. Total reflection X-ray photoelectron spectroscopy. J. Electron Spectrosc. Relat. Phenom. 76 (1995) 313-318
34. Iijima Y., and Tazawa T. Application of total reflection X-ray photoelectron spectroscopy to boron and phosphorus on Si wafer surface measurement. Spectrochim. Acta Part B 59 (2004) 1273-1276
35. van Kan J.A., and Vis R.D. An optimized set-up for total reflection particle induced X-ray emission. Spectrochim. Acta Part B 52 (1997) 847-853
36. Watanabe I., and Tanida H. Total reflection method applied to an X-ray absorption fine structure study of aqueous solution surface. Anal. Sci. 11 (1995) 525-528
37. Tanida H. Total reflection X-ray absorption fine structure on liquid surface. Spectrochim. Acta Part B 59 (2004) 1071-1076
38. G. Pepponi, D. Giubertoni, M. Bersani, J.A. van den Berg, M. Werner, R. Grisenti, C. Streli, C. Jokubonis, P. Wobrauschek, F. d'Acapito, G. Falkenberg, GI-XRF and RefleEXAFS of As shallow implants in Si, Spectrochim. Acta Part B 61 (in press).
39. Pepponi G., Beckhoff B., Ehmann T., Ulm G., Streli C., Fabry L., Pahlke S., and Wobrauschek P. Analysis of organic contaminants on Si-wafers with TXRF-NEXAFS. Spectrochim. Acta Part B 58 (2003) 2245-2253
40. Tani K., Iwata N., Mitsueda T., Ueha M., Saisho H., and Iwasaki H. X-ray absorption near edge spectroscopy from reflection X-ray absorption fine structure under grazing incidence conditions. Spectrochim. Acta Part B 59 (2004) 1221-1225
41. Sz. Török, Speciation of nitrogen compounds in nanoscopic fine aerosol samples using TXRF-NEXAFS, Spectrochim. Acta Part B 61 (in press).
42. S. Pahlke, F. Meirer, P. Wobrauschek, C. Streli, P. Westphal, C. Mantler, Adaptation of a commercial TXRF system for wafer surface analysis with a new generation of silicon drift detector, Spectrochim. Acta 61 Part B (2006-this issue), doi:10.1016/j.sab.2006.07.009.