A novel technique for the fabrication of nanostructures on silicon carbide using amorphization and oxidation

Nanotechnology

Volumn 17, Issue 17, 2006, Pages 4514-4518

  Dhar, Sarit ^a   Davis, Ryan P ^b   Feldman, Leonard C ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CHEMICAL OXYGEN DEMAND; CRYSTALLINE MATERIALS; ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; OXIDATION; SILICA; SILICON COMPOUNDS;

AMORPHOUS SIC; CHANNEL WIDTHS; MINIMUM FEATURE SIZES; NANOSCALE; NOVEL TECHNIQUES; OXIDATION RATES; OXIDE NANOSTRUCTURES; PHYSICAL MECHANISMS; SELECTIVE ETCHINGS; SIC SUBSTRATES; SILICON DIOXIDES; THERMAL OXIDATIONS;

SILICON CARBIDE;

NANOCHANNEL; NANOMATERIAL; SILICON CARBIDE; SILICON DIOXIDE;

ARTICLE; CHEMICAL REACTION; CRYSTAL STRUCTURE; NANOANALYSIS; NANOFABRICATION; OXIDATION; PRIORITY JOURNAL; REACTION ANALYSIS; STRUCTURE ANALYSIS;

EID: 34948835026     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/17/038     Document Type: Article

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