Orientation dependence of solid phase growth of implantation-induced amorphous layer in 6H-SiC

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1264-1268

  Nakamura, Tomonori ^a   Matsumoto, Seiken ^a   Satoh, Masataka ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

A1. Characterization; A1. Crystal structure; A1. Recrystallization; A3. Solid phase epitaxy; B2. semiconducting silicon compounds

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; ANNEALING; CHARACTERIZATION; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; ENERGY GAP; EPITAXIAL GROWTH; ION IMPLANTATION; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

BAND-GAP SEMICONDUCTORS; SOLID PHASE GROWTH;

SILICON CARBIDE;

EID: 0036530992     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02143-1     Document Type: Article

References (7)

1. Silicon carbide