Recent advances in high-voltage, high-frequency silicon-carbide power devices

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 1, Issue , 2006, Pages 330-337

  Hefner, Allen ^a   Ryu, Sei Hyung ^b   Hull, Brett ^b   Berning, David ^a   Hood, Colleen ^a   Ortiz Rodriguez, Jose M ^a   Rivera Lopez, Angel ^a   Duong, Tam ^a   Akuffo, Adwoa ^a   Hernandez Mora, Madelaine ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Arkansas Power Electronics International Inc

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; MILITARY APPLICATIONS; SEMICONDUCTOR DEVICES; SILICON CARBIDE;

HIGH POWER ELECTRONICS (HPE); HV-HF DEVICES; WIDE BANDGAP SEMICONDUCTOR TECHNOLOGY (WBST);

POWER ELECTRONICS;

EID: 34848886072     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2006.256542     Document Type: Conference Paper

References (29)

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