Silicon carbide power MOSFET model and parameter extraction sequence

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 1, Issue , 2003, Pages 217-226

  McNutt, Ty ^a   Hefner, Allen ^b   Mantooth, Alan ^a   Berning, David ^b   Ryu, Sei Hyung ^c  

^a UNIVERSITY OF ARKANSAS   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; PARAMETER ESTIMATION; SILICON CARBIDE; SWITCHING; TRANSCONDUCTANCE;

GATE DRIVE VOLTAGE;

MOSFET DEVICES;

EID: 0043160254     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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2. T. McNutt, A. Hefher, A. Mantooth, J. Duliere, D. Berning, R. Singh, "Silicon-Carbide PiN, Schottky, and Merged PiN-Schottky Power Diode Models Implemented in the Saber Circuit Simulator," Conf. Rec. of IEEE Power Electronics Specialists Conf (PESC), pp. 2103-2108, Vancouver, Canada, June 2001.
3. Saber is a registered trademark of Synopsys Inc., 2025 NW Cornelius Pass Rd., Hillsboro, OR 97124. Certain commercial products or materials have been identified in order to specify or describe the subject matter of this paper adequately. This does not imply recommendation or endorsement by the National Institute of Standards and Technology, nor does it imply that these products are the best for the purpose.
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