Characterization of SiC PiN diode forward bias degradation

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 2004, Pages 1252-1260

  Hefner, Allen ^a   McNutt, Ty ^b   Akuffo, Adwoa ^c   Singh, Ranbir ^a   Ellenwood, Colleen ^a   Berning, Dave ^a   Das, Mrinal K ^d   Sumakeris, Joseph J ^d   Stahlbush, Robert ^e  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b University of Arkansas   (United States)

^c School of Engineering   (United States)

^d Arkansas Power Electronics International Inc   (United States)

^e NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMITTERS; INTELLIGENT UNIVERSAL TRANSFORMERS (IUT); POWER DIODES;

DEGRADATION; ELECTRIC TRANSFORMERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; STACKING FAULTS; SWITCHING CIRCUITS;

SEMICONDUCTOR DIODES;

EID: 11144284758     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2004.1348573     Document Type: Conference Paper

References (19)

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