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1
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46449092688
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Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion
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Fourth Quarter
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A. Hefner, R, Singh, and J.S. Lai, "Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion," IEEE Power Electronics Society NEWSLETTER, Fourth Quarter 2004, pp. 10-12.
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(2004)
IEEE Power Electronics Society NEWSLETTER
, pp. 10-12
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Hefner, A.1
Singh, R.2
Lai, J.S.3
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2
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34848825141
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Development of SiC high power electronics for naval aircraft carriers
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Las Vegas, NV, April
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th GOMACTech Conf., pp. 218-221, Las Vegas, NV, April 2005.
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(2005)
th GOMACTech Conf
, pp. 218-221
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Beerman-Curtin, S.1
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3
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34848896110
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Wide Bandgap Semiconductor Technology High Power Electronics Program WBG-HPE
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Defense Advanced Research Projects Agency (DARPA), Microelectronic Technology Office (MTO), Wide Bandgap Semiconductor Technology High Power Electronics Program (WBG-HPE): http://www.darpa.mil/mto/solicitations/ BAA # 06-30.
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Microelectronic Technology Office (MTO)
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4
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2942527523
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Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator
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May
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T. McNutt, A. Hefner Jr., A. Mantooth, J. Duliere, D. Berning, and R. Singh, "Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator," IEEE Trans. Power Electronics, Vol. 19, No. 3, pp. 573-581, May 2004.
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(2004)
IEEE Trans. Power Electronics
, vol.19
, Issue.3
, pp. 573-581
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McNutt, T.1
Hefner Jr., A.2
Mantooth, A.3
Duliere, J.4
Berning, D.5
Singh, R.6
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5
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0043160254
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Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
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T. McNutt, A. Hefner, A. Mantooth, J. Duliere, D. Berning, S-H. Ryu, "Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence," Conf. Rec. of IEEE Power Electronics Specialists Conf. (PESC), pp. 217-226, (2003).
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(2003)
Conf. Rec. of IEEE Power Electronics Specialists Conf. (PESC)
, pp. 217-226
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McNutt, T.1
Hefner, A.2
Mantooth, A.3
Duliere, J.4
Berning, D.5
Ryu, S.-H.6
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6
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0034459168
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Automated Parameter Extraction Software for Advanced IGBT Modeling
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COMPEL, Blacksburg, VA, July
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A. Hefner and S. Bouché, "Automated Parameter Extraction Software for Advanced IGBT Modeling," Proceedings of The 7th Workshop on Computers in Power Electronics (COMPEL), Blacksburg, VA, July 2000.
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(2000)
Proceedings of The 7th Workshop on Computers in Power Electronics
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Hefner, A.1
Bouché, S.2
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7
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4043056609
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S-H. Ryu, S. Krishnaswami, M .O'Loughlin, J. Richmond, A. Agarwal, J. Palmour, and A. Hefner, 10 kV, 123 mΩ-cm2 4H-SiC Power DMOSFETs, IEEE Electron Dev. Lett., 25, No. 8, p. 556.
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S-H. Ryu, S. Krishnaswami, M .O'Loughlin, J. Richmond, A. Agarwal, J. Palmour, and A. Hefner, "10 kV, 123 mΩ-cm2 4H-SiC Power DMOSFETs," IEEE Electron Dev. Lett., Vol. 25, No. 8, p. 556.
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9
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34848886072
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Recent advances in high-voltage, high-frequency silicon-carbide power devices
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to appear in, Tampa, FL, October
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A. Hefner, S-H Ryu, B. Hull, D. Berning, C. Hood, J.M. Ortiz-Rodríguez, A. Rivera-Lopez, T. Duong, A. Akuffo, and M. Hernandez-Mora, "Recent advances in high-voltage, high-frequency silicon-carbide power devices," to appear in Recs. 41st IEEE Ind. Apps. Conf., Tampa, FL, October 2006.
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(2006)
Recs. 41st IEEE Ind. Apps. Conf
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Hefner, A.1
Ryu, S.-H.2
Hull, B.3
Berning, D.4
Hood, C.5
Ortiz-Rodríguez, J.M.6
Rivera-Lopez, A.7
Duong, T.8
Akuffo, A.9
Hernandez-Mora, M.10
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