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Volumn , Issue , 2006, Pages 205-211

Automated parameter extraction software for high-voltage, high-frequency SiC power MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE FILTERS; COMPUTER SOFTWARE; ELECTRIC EQUIPMENT; EXTRACTION; MODEL STRUCTURES; NONMETALS; NUMERICAL ANALYSIS; PARAMETER EXTRACTION; POWER ELECTRONICS; SILICON; SILICON CARBIDE;

EID: 48749090205     PISSN: 10935142     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMPEL.2006.305676     Document Type: Conference Paper
Times cited : (12)

References (9)
  • 1
    • 46449092688 scopus 로고    scopus 로고
    • Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion
    • Fourth Quarter
    • A. Hefner, R, Singh, and J.S. Lai, "Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion," IEEE Power Electronics Society NEWSLETTER, Fourth Quarter 2004, pp. 10-12.
    • (2004) IEEE Power Electronics Society NEWSLETTER , pp. 10-12
    • Hefner, A.1    Singh, R.2    Lai, J.S.3
  • 2
    • 34848825141 scopus 로고    scopus 로고
    • Development of SiC high power electronics for naval aircraft carriers
    • Las Vegas, NV, April
    • th GOMACTech Conf., pp. 218-221, Las Vegas, NV, April 2005.
    • (2005) th GOMACTech Conf , pp. 218-221
    • Beerman-Curtin, S.1
  • 3
    • 34848896110 scopus 로고    scopus 로고
    • Wide Bandgap Semiconductor Technology High Power Electronics Program WBG-HPE
    • Defense Advanced Research Projects Agency (DARPA), Microelectronic Technology Office (MTO), Wide Bandgap Semiconductor Technology High Power Electronics Program (WBG-HPE): http://www.darpa.mil/mto/solicitations/ BAA # 06-30.
    • Microelectronic Technology Office (MTO)
  • 4
    • 2942527523 scopus 로고    scopus 로고
    • Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator
    • May
    • T. McNutt, A. Hefner Jr., A. Mantooth, J. Duliere, D. Berning, and R. Singh, "Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator," IEEE Trans. Power Electronics, Vol. 19, No. 3, pp. 573-581, May 2004.
    • (2004) IEEE Trans. Power Electronics , vol.19 , Issue.3 , pp. 573-581
    • McNutt, T.1    Hefner Jr., A.2    Mantooth, A.3    Duliere, J.4    Berning, D.5    Singh, R.6
  • 7
    • 4043056609 scopus 로고    scopus 로고
    • S-H. Ryu, S. Krishnaswami, M .O'Loughlin, J. Richmond, A. Agarwal, J. Palmour, and A. Hefner, 10 kV, 123 mΩ-cm2 4H-SiC Power DMOSFETs, IEEE Electron Dev. Lett., 25, No. 8, p. 556.
    • S-H. Ryu, S. Krishnaswami, M .O'Loughlin, J. Richmond, A. Agarwal, J. Palmour, and A. Hefner, "10 kV, 123 mΩ-cm2 4H-SiC Power DMOSFETs," IEEE Electron Dev. Lett., Vol. 25, No. 8, p. 556.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.