Elastic interactions and diffusion of Sn in Si1-x Gex systems

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Riihimaki I ^a   Virtanen, A ^a   Kettunen, H ^a   Pusa, P ^b   Laitinen, P ^b   Raisanen J ^b  

^a UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^b UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB INTERACTIONS; DIFFUSION; ELASTICITY; MOLECULAR INTERACTIONS; STRESS RELAXATION; TIN; VACANCIES;

ELASTIC INTERACTIONS; SELF INTERSTITIALS;

SILICON ALLOYS;

EID: 34247887648     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2736279     Document Type: Article

References (24)

1. S. Uppal, A. F. W. Willoughby, J. M. Bonar, N. E. B. Cowern, T. Grasby, R. J. H. Morris, and M. G. Dowsett, J. Appl. Phys. 96, 1376 (2004).
2. S. Uppal, A. F. W. Willoughby, J. M. Bonar, A. G. R. Evans, N. E. B. Cowern, R. J. H. Morris, and M. G. Dowsett, J. Appl. Phys. 90, 4293 (2001).
3. P. Kringhøj and R. G. Elliman, Appl. Phys. Lett. 65, 324 (1994).
4. B. I. Boltaks, Diffusion in Semiconductors (Infosearch, London, 1963), p. 762.
5. M. W. Valenta, Ph.D. thesis, University of Illinois, Champaign, 1958.
6. M. Friesel, U. Södervall, and W. Gust, J. Appl. Phys. 78, 5351 (1995).
7. Y. Akasaka, K. Horie, G. Nakamura, K. Tsukamoto, and Y. Yukimoto, Jpn. J. Appl. Phys. 13, 1533 (1974).
8. H. H. Silvestri, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, and E. E. Haller, Semicond. Sci. Technol. 21, 758 (2006).
9. G. Vogel, G. Hettich, and H. Mehrer, J. Phys. C 16, 6197 (1983).
10. N. R. Zangenberg, J. Lundsgaard Hansen, J. Fage-Pedersen, and A. Nylansted Larsen, Phys. Rev. Lett. 87, 125901 (2001).
11. H. Bracht, E. E. Haller, and R. Clark-Phelps, Phys. Rev. Lett. 81, 393 (1998).
12. P. Laitinen, J. Räisänen, I. Riihimäki, J. Likonen, and E. Vainonen-Ahlgren, Europhys. Lett. 72, 416 (2005).
13. P. Laitinen, I. Riihimäki, and J. Räisänen, Phys. Rev. B 68, 155209 (2003).
14. A. Strohm, T. Voss, W. Frank, P. Laitinen, and J. Räisänen, Z. Metallkd. 93, 737 (2002).
15. P. Laitinen, A. Strohm, J. Huikari, A. Nieminen, T. Voss, C. Grodon, I. Riihimäki, M. Kummer, J. ystö, P. Dendooven, J. Räisänen, and W. Frank, Phys. Rev. Lett. 89, 085902 (2002).
16. Strohm Andreas, Ph.D. thesis Max-Planck-Institut für Metallforschung Stutgart, 2002.
17. D. York, Can. J. Phys. 44, 1079 (1966).
18. I. Riihimäki, P. Pusa, A. Virtanen, and J. Räisänen, (unpublished).
19. H. Höhler, N. Atodiresei, K. Schroeder, R. Zeller, and P. H. Dederichs, Phys. Rev. B 71, 035212 (2005).
20. P. Fahey, S. S. Iyer, and G. J. Scilla, Appl. Phys. Lett. 54, 843 (1989).
21. P. Kringhøj and A. Nylandsted Larsen, Phys. Rev. B 56, 6396 (1997).
22. H. Bracht, E. E. Haller, and R. Clark-Phelps, Phys. Rev. Lett. 81, 393 (1998).
23. P. Ramanarayanan, K. Cho, and B. Clemens, J. Appl. Phys. 94, 174 (2003).
24. A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 85, 6440 (1999).