A 100W class-E GaN HEMT with 75% drain efficiency at 2GHz

Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

Volumn , Issue , 2006, Pages 72-74

  Ui, Norihiko ^a   Sano, Seigo ^a  

^a Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

Class E operation; GaN HEMT; Harmonics; Microwave frequency

Indexed keywords

DRAIN CURRENT; ELECTRIC NETWORK TOPOLOGY; GAIN MEASUREMENT; GALLIUM NITRIDE; HARMONIC GENERATION; MICROWAVE FREQUENCIES;

CLASS-E OPERATION; DRAIN BIAS OPERATION; POWER GAIN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41549088830     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2006.282753     Document Type: Conference Paper

References (6)

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