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Volumn 2, Issue , 2004, Pages 521-524

Over 65% efficiency 300MHz bandwidth C-band internally-matched GaAs FET designed with a large-signal FET model

Author keywords

[No Author keywords available]

Indexed keywords

ANGELOV MODEL; FUNDAMENTAL FREQUENCY; POWER ADDED EFFICIENCY; SECOND HARMONIC FREQUENCIES;

EID: 4444342311     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (8)
  • 1
    • 0030082396 scopus 로고    scopus 로고
    • High efficiency GaAs-based pHEMT C-band power amplifier
    • Feb
    • J.J.Brown, et al., "High efficiency GaAs-Based pHEMT C-Band Power Amplifier", IEEE Micowave and Guided Wave Letters, vol.6, no.2, Feb, 1996.
    • (1996) IEEE Micowave and Guided Wave Letters , vol.6 , Issue.2
    • Brown, J.J.1
  • 2
    • 0028056696 scopus 로고
    • High efficiency C-band 27W internally-matched GaAs FET for space application
    • May
    • M. Kohno, et al., "High Efficiency C-Band 27W Internally-Matched GaAs FET for Space Application", IEEE MTT-S Dig. vol.1, pp.273-276, May,1994.
    • (1994) IEEE MTT-S Dig. , Issue.1 , pp. 273-276
    • Kohno, M.1
  • 3
    • 79960354246 scopus 로고
    • A new empirical nonlinear model for HEMT and MESFET devices
    • Dec.
    • I. Angelov et al.," A new empirical nonlinear model for HEMT and MESFET devices" IEEE Trans.Microwave Theory & Tech., vol.40, no. 12, pp2258-2266, Dec. 1992.
    • (1992) IEEE Trans.Microwave Theory & Tech. , vol.40 , Issue.12 , pp. 2258-2266
    • Angelov, I.1
  • 4
    • 0023292335 scopus 로고
    • GaAs FET device and circuit simulation in SPICE
    • Feb.
    • H. Statz, et al., "GaAs FET device and circuit simulation in SPICE", IEEE Trans.Electron Device., vol.ED-34,pp.160-169, Feb. 1987.
    • (1987) IEEE Trans.Electron Device. , vol.ED-34 , pp. 160-169
    • Statz, H.1
  • 5
    • 0022012872 scopus 로고
    • Comupter calculation of large-signal GaAs FET amplifier characteristics
    • Feb.
    • Materka and T.Kacprzak, "Comupter calculation of large-signal GaAs FET amplifier characteristics", IEEE Trans.Microwave Theory Tech., vol.40,pp.129-135, Feb. 1985.
    • (1985) IEEE Trans.Microwave Theory Tech. , vol.40 , pp. 129-135
    • Materka1    Kacprzak, T.2
  • 6
    • 0022320823 scopus 로고
    • A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers
    • Dec.
    • W. R. Curtice and M. Ettenberg, "A Nonlinear GaAs FET model for use in the design of output circuits for power amplifiers", IEEE Trans. Microwave Theory & Tech., vol. MYY-33, No.12, Dec.1985
    • (1985) IEEE Trans. Microwave Theory & Tech. , vol.MYY-33 , Issue.12
    • Curtice, W.R.1    Ettenberg, M.2
  • 7
    • 0029404050 scopus 로고
    • Charge conservation and the trans-capacitance element: An expresiton
    • Nov.
    • A. D. Snider, "Charge conservation and the trans-capacitance element: an expresiton," IEEE Trans. Education, vol.38, no.4, Nov. 1995
    • (1995) IEEE Trans. Education , vol.38 , Issue.4
    • Snider, A.D.1
  • 8
    • 0036068506 scopus 로고    scopus 로고
    • 70% high efficient C-band 27W hetero-structure FET for space apprication
    • H. Minamide et al., "70% High Efficient C-Band 27W Hetero-structure FET for Space Apprication", IEEE MTTS Digest, vol.2 pp. 621-623, 2002.
    • (2002) IEEE MTTS Digest , vol.2 , pp. 621-623
    • Minamide, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.