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European Physical Journal B

Volumn 48, Issue 2, 2005, Pages 151-156

Strain-balanced Si1-xGex/Si type II quantum wells for 1.55 μm detection and emission

(5) Sfina, N a Lazzari, J L b Derrien, J b D'Avitaya, F A b Said, M a

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

b CAMPUS DE LUMINY (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; HETEROJUNCTIONS; INTERFACES (MATERIALS); OSCILLATORS (ELECTRONIC); RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

CONDUCTION BANDS (CB); PSEUDOMORPHIC GROWTH; QUANTUM CONFINEMENT; VALENCE BANDS (VB);

SEMICONDUCTOR QUANTUM WELLS;

EID: 29144536627 PISSN: 14346028 EISSN: 14346036 Source Type: Journal
DOI: 10.1140/epjb/e2005-00389-6 Document Type: Article

Times cited : (17)

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