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Volumn 86, Issue 10, 1999, Pages 5898-5905

Effect of quantum well location on single quantum well p-i-n photodiode dark currents

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EID: 0005872224     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371609     Document Type: Article
Times cited : (46)

References (31)
  • 15
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    • W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952); R. N. Hall, Phys. Rev. 87, 387 (1952).
    • (1952) Phys. Rev. , vol.87 , pp. 835
    • Shockley, W.1    Read, W.T.2
  • 16
    • 36149004075 scopus 로고
    • W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952); R. N. Hall, Phys. Rev. 87, 387 (1952).
    • (1952) Phys. Rev. , vol.87 , pp. 387
    • Hall, R.N.1
  • 23
    • 0042712765 scopus 로고
    • Diffusion constants and lifetimes calculated using formaulas in H. C. Hamaker, J. Appl. Phys. 58, 2344 (1985).
    • (1985) J. Appl. Phys. , vol.58 , pp. 2344
    • Hamaker, H.C.1
  • 24
    • 85034118823 scopus 로고    scopus 로고
    • note
    • Electron, heavy, and light hole effective masses are calculated using the method of Ref. 19. "Hole" effective masses are the weighted average of light and heavy hole masses.
  • 28
    • 0004022087 scopus 로고
    • INSPEC, Institution of Electrical Engineers, London
    • D. E. Aspnes, Properties of GaAs, 2nd ed. (INSPEC, Institution of Electrical Engineers, London, 1990); D. E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, J. Appl. Phys. 60, 754 (1986).
    • (1990) Properties of GaAs, 2nd Ed.
    • Aspnes, D.E.1
  • 29
    • 36549094998 scopus 로고
    • D. E. Aspnes, Properties of GaAs, 2nd ed. (INSPEC, Institution of Electrical Engineers, London, 1990); D. E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, J. Appl. Phys. 60, 754 (1986).
    • (1986) J. Appl. Phys. , vol.60 , pp. 754
    • Aspnes, D.E.1    Kelso, S.M.2    Logan, R.A.3    Bhat, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.