Hole confinement and dynamics in δ-doped Ge quantum dots

Journal of Luminescence

Volumn 108, Issue 1-4, 2004, Pages 329-332

  Halsall, M P ^a,d   Dunbar, A D F ^a   Shiraki, Y ^b   Miura, M ^b   Wells, J P R ^c,e  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF TOKYO   (Japan)

^c FELIX Free Electron Laser Facility   (Netherlands)

^d UNIVERSITY OF CANTERBURY   (New Zealand)

^e UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Carrier dynamics; Delta doped; Infrared; Quantum dots; SiGe

Indexed keywords

ACOUSTIC EMISSIONS; ELECTRON TRANSITIONS; FREE ELECTRON LASERS; INFRARED DETECTORS; INFRARED RADIATION; PHONONS; PUMPING (LASER); RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING;

CARRIER DYNAMICS; DELTA-DOPED MATERIALS; HOLE CONFINEMENT; SIGE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2342516130     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2004.01.069     Document Type: Conference Paper

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